There were a number of things we had to do in the testing process, but the first was to measure resistances between power and ground as well as continuity checks across power and across ground pins.

Of the five chips received from MOSIS, four were properly manufactured at first glance.  Only one chip had a short between power and ground. The remaining four had an average resistance of 5.96 Mohms between the power and ground pins.

Chip	Resistance between power and ground (Ohms)	Functional?
1	5.95 M	N
2	5.75 M	N
3	6.09 M	Y
4	6	N
5 (“Star”)	6.03 M	Y

Unfortunately, two chips were immediately burnt out because they were reverse-biased upon startup.  This error was due to the fact that we rotated the padframe when doing our final chip layout, and MOSIS did not use the plus symbols at the top of the chip to correctly insert the chips into the packaging. As a result, the given directions reminding us that pins 5, 10, and 30 are

power while pins 10, 25, and 35 are GND were incorrect. If we had looked at our own documentation we would have saved the two chips.

This chip was the first victim – click the lightning bolt, and note that all the ground pins (to which power was connected) are burned.  The second chip only lost its ground pins. It is possible that we could reconnect these pins, but it is likely that the large amount of current caused permanent damage to the silicon.

The remaining two chips worked flawlessly. They correctly manipulate the memory in all nine cases mentioned in the Entire Chip Testing section.

During testing, however, one of these working chips incorrectly set the state3 pin.  This bit was high at all times.  After debugging, we traced the error back to pin D0 on the Omnilab analyzer connector. This pin does not change, even when tied to ground.  We believe that this Omnilab problem caused our chip to sink too much current, so the pin burned out, as found upon visual inspection.